Optical critical points of Si x Ge1-x-ySn y alloys with high Si content

Fischer IA, Berrier A, Hornung F, Oehme M, Zaumseil P, Capellini G, Den Driesch NV, Buca D, Schulze J (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Semiconductor Science and Technology Institute of Physics: Hybrid Open Access

Book Volume: 32

Article Number: 124004

Journal Issue: 12

DOI: 10.1088/1361-6641/aa95d3

Abstract

We extend the analysis of optical transition energies above 1.5 eV in ternary Si x Ge1-x-ySn y alloys grown by molecular beam epitaxy to a composition range in which 1-x-y is as low as 0.405. Simple models for transition energies assume a quadratic dependence on material content. Comparing our results to existing predictions of the transition energies based on results obtained from samples with much lower Si and Sn content, however, we find a significant disagreement between experiment and theory, indicating that the assumption of a quadratic dependence might not be valid for the entire composition range of the ternary alloy.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) Forschungszentrum Jülich / Research Centre Jülich (FZJ) DE Germany (DE)

How to cite

APA:

Fischer, I.A., Berrier, A., Hornung, F., Oehme, M., Zaumseil, P., Capellini, G.,... Schulze, J. (2017). Optical critical points of Si x Ge1-x-ySn y alloys with high Si content. Semiconductor Science and Technology, 32(12). https://doi.org/10.1088/1361-6641/aa95d3

MLA:

Fischer, Inga A., et al. "Optical critical points of Si x Ge1-x-ySn y alloys with high Si content." Semiconductor Science and Technology 32.12 (2017).

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