SiGeSn material for integrated optical devices
Oehme M, Schwarz D, Clausen CJ, Fischer IA, Schulze J (2018)
Publication Type: Conference contribution
Publication year: 2018
Journal
Publisher: SPIE
Book Volume: 10686
Conference Proceedings Title: Proceedings of SPIE - The International Society for Optical Engineering
Event location: Strasbourg
ISBN: 9781510618985
DOI: 10.1117/12.2318011
Abstract
In this paper, an ultra-thin buffer technology for the epitaxial growth of SixGe1-x-ySny structures on Si or Si-on-Insulator substrates by using molecular beam epitaxy is presented. This technology builds the basis for integrated photonic devices as detectors, modulators and light sources. The paper discusses different device families with different material compositions, which all use a relaxed Ge virtual substrate with high quality. These are pseudomorphic Ge/Ge1-ySny structures, SixGe1-x-ySny structures lattice matched to Ge and (partially) relaxed Ge1-ySny virtual substrates. The photonic devices consist of heterojunction diodes with vertical pin doping structures. As an example, Ge/Ge1-ySnymulti quantum well photodetectors which active regions made from Nx(Ge0.93Sn0.07/Ge) multi-quantum well structures are presented. Optical measurements at high frequencies are successfully performed on these photodetectors. A 3-dB bandwidth above 40 GHz is measured at the optical telecommunication wavelength of 1550 nm.
Involved external institutions
Germany (DE)How to cite
APA:
Oehme, M., Schwarz, D., Clausen, C.J., Fischer, I.A., & Schulze, J. (2018). SiGeSn material for integrated optical devices. In Laurent Vivien, Peter O'Brien, Roel G. Baets (Eds.), Proceedings of SPIE - The International Society for Optical Engineering. Strasbourg, FR: SPIE.
MLA:
Oehme, M., et al. "SiGeSn material for integrated optical devices." Proceedings of the Silicon Photonics: From Fundamental Research to Manufacturing 2018, Strasbourg Ed. Laurent Vivien, Peter O'Brien, Roel G. Baets, SPIE, 2018.
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