Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver

Koerner R, Fischer IA, Soref R, Schwarz D, Clausen CJ, Hänel L, Oehme M, Schulze J (2018)

Publication Type: Conference contribution

Publication year: 2018

Journal

Technical Digest - International Electron Devices Meeting Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 24.4.1-24.4.4

Conference Proceedings Title: Technical Digest - International Electron Devices Meeting, IEDM

Event location: San Francisco, CA US

ISBN: 9781538635599

DOI: 10.1109/IEDM.2017.8268453

Abstract

We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) - The Zener-Emitter (ZE) [1] and the Esaki-Collector (EC). The devices enable for the first time monolithic, highly efficient electrical-to-optical (E/O; Cs = 114 mV/dec) and optical-to-electrical (O/E; Cs = 31 mV/dec) signal conversion since the TDs control carrier injection and extraction. The light source (ZE) is realized as an ultra-fast LED (f > 1 GHz) and as a cavity enhanced Laser source with Pout = 1.6 mW output power. The carrier-collection efficiency in the detector (EC) is enhanced by the Esaki tunnel junction, while the rapid turn-off is induced by the negative-differential resistance (NDR; f > 22 GHz), enabling sub-thermal voltage switching.

Involved external institutions

Universität Stuttgart DE Germany (DE) University of Massachusetts Boston (UMass Boston) US United States (USA) (US)

How to cite

APA:

Koerner, R., Fischer, I.A., Soref, R., Schwarz, D., Clausen, C.J., Hänel, L.,... Schulze, J. (2018). Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 24.4.1-24.4.4). San Francisco, CA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Koerner, R., et al. "Tunnel-modulated Ge LED/laser light source and a sub-thermal voltage switching detector for the monolithic on-chip optical transceiver." Proceedings of the 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, CA Institute of Electrical and Electronics Engineers Inc., 2018. 24.4.1-24.4.4.

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