An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes

Augel L, Bechler S, Körner R, Oehme M, Schulze J, Fischer IA (2018)

Publication Type: Conference contribution

Publication year: 2018

Journal

Technical Digest - International Electron Devices Meeting Institute of Electrical and Electronics Engineers

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 40.5.1-40.5.4

Conference Proceedings Title: Technical Digest - International Electron Devices Meeting, IEDM

Event location: San Francisco, CA US

ISBN: 9781538635599

DOI: 10.1109/IEDM.2017.8268528

Abstract

Collinear refractive index sensors offer highest sensitivities at smallest device foot-print. Using a complementary metal-oxide-semiconductor compatible process for fabrication paves the way to cheap devices enabling integrated biosensors. We present a vertical Ge PIN photodiode equipped with Al nanohole arrays placed directly on top of the diode. The interaction of plasmonic resonances and thin-film reflection within the PIN layer stack enables sensitivities comparable to Au sensing systems showing FOM∗ up to 14.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Augel, L., Bechler, S., Körner, R., Oehme, M., Schulze, J., & Fischer, I.A. (2018). An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes. In Technical Digest - International Electron Devices Meeting, IEDM (pp. 40.5.1-40.5.4). San Francisco, CA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Augel, L., et al. "An integrated plasmonic refractive index sensor: Al nanohole arrays on Ge PIN photodiodes." Proceedings of the 63rd IEEE International Electron Devices Meeting, IEDM 2017, San Francisco, CA Institute of Electrical and Electronics Engineers Inc., 2018. 40.5.1-40.5.4.

BibTeX: Download