Elsayed A, Schulze J (2018)
Publication Type: Conference contribution
Publication year: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Pages Range: 7-11
Conference Proceedings Title: 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings
ISBN: 9789532330977
DOI: 10.23919/MIPRO.2018.8399821
Ultra-thin layers of Boron deposited on Silicon (100) by means of Molecular Beam Epitaxy are utilized to form highly blocking pn-junctions. Growth temperatures and thicknesses are investigated ranging 500°C to 700°C and 3nm to 5nm. Diodes realized with these layers display high ideality, low series resistance and high reverse blocking ability The consequent usage of these layers for realization of Insulated Gate Bipolar Transistors is also discussed.
APA:
Elsayed, A., & Schulze, J. (2018). Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions. In Boris Vrdoljak, Edvard Tijan, Tihana Galinac Grbac, Vlado Sruk, Marina Cicin-Sain, Slobodan Ribaric, Karolj Skala, Marko Koricic, Mladen Mauher, Stjepan Gros, Predrag Pale, Matej Janjic (Eds.), 2018 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018 - Proceedings (pp. 7-11). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..
MLA:
Elsayed, Ahmed, and Jörg Schulze. "Characterization of thin Boron layers grown on Silicon utilizing molecular beam epitaxy for ultra-shallow pn-junctions." Proceedings of the 41st International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2018, Opatija Ed. Boris Vrdoljak, Edvard Tijan, Tihana Galinac Grbac, Vlado Sruk, Marina Cicin-Sain, Slobodan Ribaric, Karolj Skala, Marko Koricic, Mladen Mauher, Stjepan Gros, Predrag Pale, Matej Janjic, Institute of Electrical and Electronics Engineers Inc., 2018. 7-11.
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