Growth and characterisation of pure B layers on Ge(hkl) and Si(hkl) utilizing molecular beam epitaxy
Schwarz D, Elsayed A, Gebert L, Schulze J (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Institute of Physics Publishing
Book Volume: 93
Pages Range: 109-111
Conference Proceedings Title: ECS Transactions
Event location: Madison, WI
ISBN: 9781607685395
Abstract
Since the first investigations on pure B layers on Si have shown their potential application in high performance electronic devices, the interest in these structures increased rapidly. In this study, we report the growth of pure B layers on Ge(001), Si(001) and Si(111) substrates as well as on virtual Ge(100) substrates on Si utilizing molecular beam epitaxy in order to form ultra-shallow pn-junctions. A complementary metal oxide semiconductor compatible fabrication process was used afterwards to fabricate single mesa diodes. Further electrical characterizations of the devices show diode behavior with high ideality, low series resistance and low dark current density, compared to Schottky and homogenous doped, diodes. Concluding the given results, we discuss further research key aspects and possible applications of this novel material.
Involved external institutions
Germany (DE)How to cite
APA:
Schwarz, D., Elsayed, A., Gebert, L., & Schulze, J. (2019). Growth and characterisation of pure B layers on Ge(hkl) and Si(hkl) utilizing molecular beam epitaxy. In M. A. Eriksson, M. G. Lagally (Eds.), ECS Transactions (pp. 109-111). Madison, WI, US: Institute of Physics Publishing.
MLA:
Schwarz, D., et al. "Growth and characterisation of pure B layers on Ge(hkl) and Si(hkl) utilizing molecular beam epitaxy." Proceedings of the 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference, Madison, WI Ed. M. A. Eriksson, M. G. Lagally, Institute of Physics Publishing, 2019. 109-111.
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