GeSn/Ge pin Diodes on Si with Sn Contents up to 14 %
Oehme M, Schulze J (2019)
Publication Type: Conference contribution
Publication year: 2019
Journal
Publisher: Institute of Physics Publishing
Book Volume: 93
Pages Range: 45-48
Conference Proceedings Title: ECS Transactions
Event location: Madison, WI
ISBN: 9781607685395
Abstract
We report about the fabrication of GeSn/Ge pin diodes with Sn concentrations between 8 % and 14 %. The thickness of the GeSn layers in the intrinsic region was 100 nm. Starting from 12 % Sn, the GeSn begins to relax, which is associated with a significant increase in dark current of the associated pin bulk diodes. In contrast, the same amount of Sn incorporated in multi quantum-well structures grows pseudomorphically. In these diodes the dark current is reduced by almost two orders of magnitude for the highest Sn concentration of 14 % compared to the pin bulk diodes with the same Sn concentrations.
Involved external institutions
Germany (DE)How to cite
APA:
Oehme, M., & Schulze, J. (2019). GeSn/Ge pin Diodes on Si with Sn Contents up to 14 %. In M. A. Eriksson, M. G. Lagally (Eds.), ECS Transactions (pp. 45-48). Madison, WI, US: Institute of Physics Publishing.
MLA:
Oehme, M., and J. Schulze. "GeSn/Ge pin Diodes on Si with Sn Contents up to 14 %." Proceedings of the 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference, Madison, WI Ed. M. A. Eriksson, M. G. Lagally, Institute of Physics Publishing, 2019. 45-48.
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