Schwarz D, Funk HS, Guguieva K, Oehme M, Schulze J (2020)
Publication Type: Conference contribution
Publication year: 2020
Publisher: IOP Publishing Ltd
Book Volume: 98
Pages Range: 339-349
Conference Proceedings Title: ECS Transactions
ISBN: 9781607685395
The ternary alloy semiconductor SixGe1-x-ySny presents itself as promising approach towards the monolithic integrated laser light source on the Si platform. SixGe1-x-ySny offers notable properties like the direct bandgap transition at high Sn concentrations and the decoupling of its bandgap and lattice constant. In this paper, we present the growth, fabrication and electrical characterisation of lattice-matched Ge- SixGe1-x-ySny hetero-junction devices with a Sn concentration up to 12.5 %. The x-ray diffraction analysis of the layers is used to verify the fulfillment of the lattice-matching of the SixGe1-x-ySny growth on Ge. The required crystal quality for working pn-heterojunctions is achieved. The usage of the capacitance-voltage intercept method allowed us the determination of the built-in voltage of the fabricated heterojunction in dependence of the SixGe1-x-ySny composition.
APA:
Schwarz, D., Funk, H.S., Guguieva, K., Oehme, M., & Schulze, J. (2020). Capacitance-voltage measurements on MBE-grown Ge-SixGe1-x-ySny heterojunction pn-Diodes for material characterisation. In Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai (Eds.), ECS Transactions (pp. 339-349). Honolulu, HI, US: IOP Publishing Ltd.
MLA:
Schwarz, D., et al. "Capacitance-voltage measurements on MBE-grown Ge-SixGe1-x-ySny heterojunction pn-Diodes for material characterisation." Proceedings of the Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, HI Ed. Q. Liu, J. M. Hartmann, J. R. Holt, X. Gong, V. Jain, G. Niu, G. Masini, A. Ogura, S. Miyazaki, M. Ostling, W. Bi, A. Schulze, A. Mai, IOP Publishing Ltd, 2020. 339-349.
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