Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells

Fischer IA, Clausen CJ, Schwarz D, Zaumseil P, Capellini G, Virgilio M, Figueira MCDS, Birner S, Koelling S, Koenraad PM, Huang MRS, Koch CT, Wendav T, Busch K, Schulze J (2020)

Publication Type: Journal article

Publication year: 2020

Journal

Physical Review Materials American Physical Society

Book Volume: 4

Article Number: 024601

Journal Issue: 2

DOI: 10.1103/PhysRevMaterials.4.024601

Abstract

While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers of pure Sn on Ge and their overgrowth with Ge using molecular beam epitaxy can be a means of obtaining Sn-rich quantum wells with very high Sn content while maintaining high crystal quality. Here, we provide structural and compositional information on such structures with very high accuracy. Based on our characterization results we theoretically predict transition energies and compare them with experimental results from photoluminescence measurements. Our results constitute the groundwork for tuning the molecular beam epitaxy based growth of Sn-rich quantum wells and dots for applications in electronic and optoelectronic devices.

Authors with CRIS profile

Jörg Schulze

Involved external institutions

Universität Stuttgart DE Germany (DE) Humboldt-Universität zu Berlin DE Germany (DE) Eindhoven University of Technology / Technische Universiteit Eindhoven (TU/e) NL Netherlands (NL) University of Pisa / Università di Pisa (UniPi) IT Italy (IT) nextnano GmbH DE Germany (DE) Università degli Studi Roma Tre IT Italy (IT) Brandenburgische Technische Universität Cottbus-Senftenberg (BTU) DE Germany (DE)

How to cite

APA:

Fischer, I.A., Clausen, C.J., Schwarz, D., Zaumseil, P., Capellini, G., Virgilio, M.,... Schulze, J. (2020). Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells. Physical Review Materials, 4(2). https://doi.org/10.1103/PhysRevMaterials.4.024601

MLA:

Fischer, Inga A., et al. "Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells." Physical Review Materials 4.2 (2020).

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