Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers

Dettling MM, Weibhaupt D, Funk HS, Kern M, Berkmann F, Clausen C, Oehme M, Schwarz D, Slageren JV, Schulze J (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 17-21

Conference Proceedings Title: 2020 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020 - Proceedings

Event location: Opatija HU

ISBN: 9789532330991

DOI: 10.23919/MIPRO48935.2020.9245273

Abstract

This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100) wafer using molecular beam epitaxy. The crystal structure and quality of the Ge1-xSnx-epilayers were analyzed by high-resolution X-ray diffraction. In order to extract the carrier mobilities in Ge1-xSnx, low temperature hall measurements were carried out, using a Van-der-Pauw-geometry. It is shown that with increasing Sn-concentration we find a decrease in carrier mobility, which corresponds to an increasing sheetresistance.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Dettling, M.M., Weibhaupt, D., Funk, H.S., Kern, M., Berkmann, F., Clausen, C.,... Schulze, J. (2020). Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers. In Marko Koricic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Bojan Jerbic, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Tihomir Katulic, Predrag Pale, Tihana Galinac Grbac, Nikola Filip Fijan, Adrian Boukalov, Dragan Cisic, Vera Gradisnik (Eds.), 2020 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020 - Proceedings (pp. 17-21). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..

MLA:

Dettling, M. M., et al. "Carrier mobilities in heavily doped pseudomorphic Ge1-x Snx-epilayers." Proceedings of the 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020, Opatija Ed. Marko Koricic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Bojan Jerbic, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Tihomir Katulic, Predrag Pale, Tihana Galinac Grbac, Nikola Filip Fijan, Adrian Boukalov, Dragan Cisic, Vera Gradisnik, Institute of Electrical and Electronics Engineers Inc., 2020. 17-21.

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