Processing sequence for a PureB bipolar junction transistor

Causevic A, Funk HS, Schwarz D, Guguieva K, Schulze J (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Pages Range: 13-16

Conference Proceedings Title: 2020 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020 - Proceedings

Event location: Opatija HU

ISBN: 9789532330991

DOI: 10.23919/MIPRO48935.2020.9245196

Abstract

Since we have previously shown that the deposition of pure Boron (PureB) on Silicon (Si) forms an almost ideal pn-junction, the next step is to utilize this technology towards a high-speed pnp bipolar junction transistor (BJT) made from Si. Here, the Emitter is made from a PureB. The PureB layer is extremely thin and features an almost defect-free pn-junction, a low off-current and a low series resistance, which makes it feasible to achieve better characteristics than the conventional BJT. However, PureB is very unreactive and therefore hard to etch, which results in a high roughness of the underlying semiconductor after etching. That is why it is challenging to build a three-terminal device such as a BJT. In this work, we present a novel process scheme using a double-layer hardmask of Silicon dioxide (SiO2) and Aluminum oxide (Al2 O3) to enable differential epitaxy of PureB. Onto the substrate a layer stack of SiO2 and Al2 O3 was deposited and structured, the Al2 O3 was then recrystallized to be used as an etch stop. PureB was deposited subsequently by differ-rential epitaxy into the SiO2 windows.

Involved external institutions

Universität Stuttgart DE Germany (DE)

How to cite

APA:

Causevic, A., Funk, H.S., Schwarz, D., Guguieva, K., & Schulze, J. (2020). Processing sequence for a PureB bipolar junction transistor. In Marko Koricic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Bojan Jerbic, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Tihomir Katulic, Predrag Pale, Tihana Galinac Grbac, Nikola Filip Fijan, Adrian Boukalov, Dragan Cisic, Vera Gradisnik (Eds.), 2020 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020 - Proceedings (pp. 13-16). Opatija, HU: Institute of Electrical and Electronics Engineers Inc..

MLA:

Causevic, A., et al. "Processing sequence for a PureB bipolar junction transistor." Proceedings of the 43rd International Convention on Information, Communication and Electronic Technology, MIPRO 2020, Opatija Ed. Marko Koricic, Karolj Skala, Zeljka Car, Marina Cicin-Sain, Vlado Sruk, Dejan Skvorc, Slobodan Ribaric, Bojan Jerbic, Stjepan Gros, Boris Vrdoljak, Mladen Mauher, Edvard Tijan, Tihomir Katulic, Predrag Pale, Tihana Galinac Grbac, Nikola Filip Fijan, Adrian Boukalov, Dragan Cisic, Vera Gradisnik, Institute of Electrical and Electronics Engineers Inc., 2020. 13-16.

BibTeX: Download