GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors

Yu F, Yao S, Roemer F, Witzigmann B, Schimpke T, Strassburg M, Bakin A, Schumacher HW, Peiner E, Wasisto HS, Waag A (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Book Volume: 28

Article Number: 095206

Journal Issue: 9

DOI: 10.1088/1361-6528/aa57b6

Abstract

Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ±0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.

Authors with CRIS profile

Bernd Witzigmann

Involved external institutions

Technische Universität Braunschweig DE Germany (DE) Universität Kassel DE Germany (DE) Osram Opto Semiconductors GmbH DE Germany (DE) Physikalisch-Technische Bundesanstalt (PTB) DE Germany (DE)

How to cite

APA:

Yu, F., Yao, S., Roemer, F., Witzigmann, B., Schimpke, T., Strassburg, M.,... Waag, A. (2017). GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors. Nanotechnology, 28(9). https://doi.org/10.1088/1361-6528/aa57b6

MLA:

Yu, Feng, et al. "GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors." Nanotechnology 28.9 (2017).

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