Hübner T, Richter AF, Feldmann J, Brabec C, von Malm N (2021)
Publication Type: Journal article
Publication year: 2021
Book Volume: 93
Article Number: 106156
DOI: 10.1016/j.orgel.2021.106156
Indium phosphide-based colloidal quantum dot (QD) light-emitting diodes represent a promising technology for various lighting applications. To promote this innovative technology closer to an industrialized production environment, the fabrication methods should be adapted. Hence it is necessary to replace the common spin-coating process under an inert atmosphere, by a more cost-efficient inkjet-printing process at ambient conditions. However, in our case, this transfer results in devices with limited performance and parasitic emission channels besides the desired QD emission. In this paper, we identify the physical origin of these parasitic emission channels for three different device layouts depending on the QD material as well as the number of inkjet-printed layers. For the first type of devices, a recombination process on the dopant of the electron transporting layer (ETL) as well as an exciplex formation at the interface between QDs and ETL was identified. For the next device layout, the introduction of a hole-conducting matrix embedding the QDs leads to a shift of the parasitic emission with contributions from the matrix material. Finally, the integration of a hole injection layer leads to a reduction of the undesired emission processes. For all three kinds of devices, the spacial separation of the dopant in the ETL from the QDs is a critical factor, since it directly influences the parasitic emission channels.
APA:
Hübner, T., Richter, A.F., Feldmann, J., Brabec, C., & von Malm, N. (2021). Parasitic emission in inkjet-printed InP-based quantum dot light-emitting diodes. Organic Electronics, 93. https://doi.org/10.1016/j.orgel.2021.106156
MLA:
Hübner, Tobias, et al. "Parasitic emission in inkjet-printed InP-based quantum dot light-emitting diodes." Organic Electronics 93 (2021).
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