An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI

Ciocoveanu R, Lammert V, Weigel R, Issakov V (2019)


Publication Type: Conference contribution

Publication year: 2019

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019

Event location: Atlanta, GA US

ISBN: 9781728131436

DOI: 10.1109/IMC-5G47857.2019.9160392

Abstract

This paper presents an integrated 28 GHz front-end module (FEM) for 5th Generation (5G) applications and fabricated in a 45 nm partially depleted silicon on insulator (PD-SOI) technology. In transmit (Tx) mode at 28 GHz, the measured saturated output power (Psat), maximum power-added efficiency (PAEmax), output-referred 1-dB compression point (OP1dB) are 17.2 dBm, 26 % and 16.7 dBm, respectively, with 86.4 mW dc power consumption from a 1.8 V supply. In receive (Rx) mode at 28 GHz, the measured gain, noise figure (NF), input-referred 1-dB compression point (IP1dB) are 9dB, 3.6dB and -10dBm, respectively, with 14.8mW dc power consumption from a 1 V supply. The chip core size is 0.62mm x 0.75mm.

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How to cite

APA:

Ciocoveanu, R., Lammert, V., Weigel, R., & Issakov, V. (2019). An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI. In 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019. Atlanta, GA, US: Institute of Electrical and Electronics Engineers Inc..

MLA:

Ciocoveanu, Radu, et al. "An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI." Proceedings of the 2019 IEEE MTT-S International Microwave Conference on Hardware and Systems for 5G and Beyond, IMC-5G 2019, Atlanta, GA Institute of Electrical and Electronics Engineers Inc., 2019.

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