CMOS RF Switch with Fast Discharge Feature

Solomko V, Özdamar O, Weigel R, Hagelauer A (2021)

Publication Type: Journal article

Publication year: 2021

Journal

IEEE Solid-State Circuits Letters IEEE

Pages Range: 1-1

DOI: 10.1109/LSSC.2021.3059918

Abstract

A radio-frequency (RF) switch featuring a circuit for fast discharge of the gate oxide capacitance is presented in the paper. Two auxiliary transistors are added between the gate and source/drain terminals of the main switch. They are brought into ON state for a short time at the beginning of the switching transient, discharging the gate of the main transistor and speeding up the switching process. An integrated circuit implementing the proposed concept based on a large shunt switch has been designed and fabricated in Infineon 130nm bulk-CMOS RF-switch technology. The measurements have demonstrated improvement in switching time (defined as time between the control signal trigger edge and 90% of the target RF amplitude) of above 50% with no penalty in RF performance comparing to the conventional switch without discharge feature. The measured OFF-state insertion loss and ON-state isolation at 824MHz were 0.12 dB and 27.2 dB respectively.

Authors with CRIS profile

Oguzhan Özdamar Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Amelie Marietta Hagelauer

Involved external institutions

Infineon Technologies AG DE Germany (DE) Universität Bayreuth DE Germany (DE)

How to cite

APA:

Solomko, V., Özdamar, O., Weigel, R., & Hagelauer, A. (2021). CMOS RF Switch with Fast Discharge Feature. IEEE Solid-State Circuits Letters, 1-1. https://doi.org/10.1109/LSSC.2021.3059918

MLA:

Solomko, Valentyn, et al. "CMOS RF Switch with Fast Discharge Feature." IEEE Solid-State Circuits Letters (2021): 1-1.

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