Three-dimensional in-situ growth surveillance of bulky SiC crystals

Salamon M, Arzig M, Wellmann P, Uhlmann N (2019)

Publication Language: English

Publication Type: Conference contribution, Original article

Publication year: 2019

Publisher: German Society for Non-Destructive Testing (DGZfP)

Conference Proceedings Title: Proceedings of the DIR 2019

Event location: Fürth DE

Abstract

The integrated design of modern Computed Tomography systems, optimized to achieve the required environmental conditions for a scan, such as stable Temperature or low vibration has helped to widespread the CT method along non-destructive testing and coordinate measurement applications. For in-situ analysis of processes this integrated design is often limiting the application to processes with relatively low peripheral requirements and small footprint. In general, the in-situ process is adapted to the CT using an experimental environment. In cases a productive environment is required the CT has to adapt to the process and its environment. The complex structure of a physical vapor transport (PVT) reactor represents such a case. Inside an evacuated crucible heated inductively to approx. 2400 ° C, the deposition of silicon and carbon atoms takes place on a seed crystal. Over a period of about 100 to 200 hours, crystal of about 20 - 30 mm in height and currently 150 mm in diameter are grown. The growth kinetics depends strongly on the temperature field and further processes characteristics. The geometry of the interior of the crucible and the growth interface of the crystal are relevant parameters that can be observed during the process by means of computed tomography. The publication presents the integration of a CT system into a PVT crystal growing process with a crystal diameter of 75 mm and the challenges related to the absorption characteristics of the bulky crystal and the quality losses resulting from the applied region of interest scanning.

Authors with CRIS profile

Matthias Arzig Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Fraunhofer Development Center X-ray Technology (EZRT) DE Germany (DE)

How to cite

APA:

Salamon, M., Arzig, M., Wellmann, P., & Uhlmann, N. (2019). Three-dimensional in-situ growth surveillance of bulky SiC crystals. In German Society for Non-Destructive Testing (DGZfP) (Eds.), Proceedings of the DIR 2019. Fürth, DE: German Society for Non-Destructive Testing (DGZfP).

MLA:

Salamon, Michael, et al. "Three-dimensional in-situ growth surveillance of bulky SiC crystals." Proceedings of the International Symposium on Digital Industrial Radiology and Computed Tomography – DIR2019, Fürth Ed. German Society for Non-Destructive Testing (DGZfP), German Society for Non-Destructive Testing (DGZfP), 2019.

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