A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology

Breun S, Schrotz AM, Dietz M, Issakov V, Weigel R (2021)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2021

Event location: Virtual Conference

DOI: 10.1109/sirf51851.2021.9383328

Authors with CRIS profile

Sascha Breun Lehrstuhl für Technische Elektronik Albert-Marcel Schrotz Lehrstuhl für Technische Elektronik Marco Dietz Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Breun, S., Schrotz, A.-M., Dietz, M., Issakov, V., & Weigel, R. (2021). A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology. In Proceedings of the IEEE Radio & Wireless Week. Virtual Conference.

MLA:

Breun, Sascha, et al. "A 314-344 GHz Frequency Doubler with Driving Stage and 1 dBm Psat in SiGe BiCMOS Technology." Proceedings of the IEEE Radio & Wireless Week, Virtual Conference 2021.

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