Direct state transfer in MLC based memristive ReRAM devices for ternary computing

Fey D, Reuben JR (2020)

Publication Type: Conference contribution

Publication year: 2020

Publisher: Institute of Electrical and Electronics Engineers Inc.

Conference Proceedings Title: ECCTD 2020 - 24th IEEE European Conference on Circuit Theory and Design

Event location: Sofia BG

ISBN: 9781728171838

DOI: 10.1109/ECCTD49232.2020.9218323

Abstract

In this paper we present a new procedure for a direct state transfer in ReRAM based multi-level cell (MLC) memristors for future ternary data processing, i.e. the direct transitioning of one ternary MLC state to another state. According to the rules of a ternary stored-transfer-adder cell the content of two memristors storing three different resistance values are read out and processed by a sense amplifier to produce a new ternary state for two output memristors. In contrast to own older work the analogue-digital-converting of ternary MLC based memristors with subsequent digital processing is avoided what requires a comparatively high energy budget. The solution is based on an adapted version of an existing sense amplifier circuit realising an in-memory processing for a majority logic developed by our own. We present the new concept and simulation results characterising the functionality for the new memristive ternary MLC for a ReRAM technology from Innovations for High Performance Microelectronics (IHP).

Authors with CRIS profile

Dietmar Fey Lehrstuhl für Informatik 3 (Rechnerarchitektur) John Reuben Prabahar Lehrstuhl für Informatik 3 (Rechnerarchitektur)

How to cite

APA:

Fey, D., & Reuben, J.R. (2020). Direct state transfer in MLC based memristive ReRAM devices for ternary computing. In ECCTD 2020 - 24th IEEE European Conference on Circuit Theory and Design. Sofia, BG: Institute of Electrical and Electronics Engineers Inc..

MLA:

Fey, Dietmar, and John Reuben Reuben. "Direct state transfer in MLC based memristive ReRAM devices for ternary computing." Proceedings of the 24th IEEE European Conference on Circuit Theory and Design, ECCTD 2020, Sofia Institute of Electrical and Electronics Engineers Inc., 2020.

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