Kohlhepp B, Barwig M, Dürbaum T (2019)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2019
Publisher: VDE
Pages Range: pp
Conference Proceedings Title: PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
ISBN: 978-3-8007-4938-6
As the asymmetrical half-bridge PWM converter achieves high efficiency by employing zero voltage switching (ZVS), it is a highly promising candidate for switch mode power supplies. Nevertheless, high efficiency in low output voltage applications requires synchronous rectification. Even though a simple replacement of the Schottky rfectifier diode by a synchronous rectifier shows promising results by simulation, practical setups reveal great deviations. Strong damped oscillations during turn-off of the synchronous rectifier induce enormous losses. Using a GaN-FET as synchronous rectifier featuring its very good parasitic properties solves the problem during turn-off. Therefore, this paper analyzes an asymmetrical half-bridge PWM converter design employing a GaN-HEMT as synchronous rectifier, directly focusing on solving the identified problem.
APA:
Kohlhepp, B., Barwig, M., & Dürbaum, T. (2019). GaN Improves Efficiency of an Asymmetrical Half-Bridge PWM Converter with Synchronous Rectifier. In VDE (Eds.), PCIM Europe 2019; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. pp). Nürnberg, DE: VDE.
MLA:
Kohlhepp, Benedikt, Markus Barwig, and Thomas Dürbaum. "GaN Improves Efficiency of an Asymmetrical Half-Bridge PWM Converter with Synchronous Rectifier." Proceedings of the International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2019), Nürnberg Ed. VDE, VDE, 2019. pp.
BibTeX: Download