Kohlhepp B, Kuring C, Peller S, Kübrich D (2020)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2020
Publisher: IEEE
Pages Range: pp
DOI: 10.23919/EPE20ECCEEurope43536.2020.9215744
GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.
APA:
Kohlhepp, B., Kuring, C., Peller, S., & Kübrich, D. (2020). Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions. In IEEE (Eds.), Proceedings of the 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) (pp. pp). Lyon, France, FR: IEEE.
MLA:
Kohlhepp, Benedikt, et al. "Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions." Proceedings of the 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France Ed. IEEE, IEEE, 2020. pp.
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