Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions

Kohlhepp B, Kuring C, Peller S, Kübrich D (2020)

Publication Type: Conference contribution, Conference Contribution

Publication year: 2020

Publisher: IEEE

Pages Range: pp

Event location: Lyon, France FR

DOI: 10.23919/EPE20ECCEEurope43536.2020.9215744

Abstract

GaN-HEMTs gain a lot of attention to power electronics engineers. However, they could exhibit increased on-state resistance due to charge trapping. This paper focusses on measuring this effect for high voltage devices. Measurements reveal an unexpected blocking voltage dependency of on-state resistance. Therefore, a second measurement setup serves as verification.

Authors with CRIS profile

Benedikt Kohlhepp Professur für Optoelektronik Stefan Peller Professur für Optoelektronik Daniel Kübrich Professur für Optoelektronik

Involved external institutions

Technische Universität Berlin DE Germany (DE)

How to cite

APA:

Kohlhepp, B., Kuring, C., Peller, S., & Kübrich, D. (2020). Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions. In IEEE (Eds.), Proceedings of the 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) (pp. pp). Lyon, France, FR: IEEE.

MLA:

Kohlhepp, Benedikt, et al. "Measurement of Dynamic On-State Resistance of High-Voltage GaN-HEMTs under Real Application Conditions." Proceedings of the 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France Ed. IEEE, IEEE, 2020. pp.

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