Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °c investigated by in situ high energy x-ray diffraction

Li Z, Will J, Yang D (2020)

Publication Type: Journal article

Publication year: 2020

Journal

AIP Advances AIP Publishing

Book Volume: 10

Article Number: 105324

Journal Issue: 10

DOI: 10.1063/5.0027232

Abstract

In this study, we compare the real-time oxygen (O) precipitation kinetics of heavily germanium (Ge)-doped Czochralski-silicon (Cz-Si) at 900 °C - under different pre-annealing conditions - with those of undoped Cz-Si. We follow in situ the evolution of the Bragg intensity in Laue transmission geometry at elevated temperature and identify both diffusion-driven growth and Ostwald ripening of the O precipitates. We build on our past results, where we observed that although Ge-doping at 800 °C facilitates grown-in precipitates, it has no influence on the nucleation rate. Our present results indicate that within a diffusion-driven growth model, Ge-doping influences the nucleation rate at 650 °C and has no impact at 450 °C. These results shed further light on the origin of various thermal historical effects in Cz-Si samples with high levels of Ge doping.

Authors with CRIS profile

Johannes Will Lehrstuhl für Kristallographie und Strukturphysik (ICSP)

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Shandong-University (SDU) CN China (CN) Zhejiang University / Chekiang University / 浙江大学 CN China (CN)

How to cite

APA:

Li, Z., Will, J., & Yang, D. (2020). Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °c investigated by in situ high energy x-ray diffraction. AIP Advances, 10(10). https://dx.doi.org/10.1063/5.0027232

MLA:

Li, Zhen, Johannes Will, and Deren Yang. "Oxygen precipitation in Ge-doped Czochralski-silicon at 900 °c investigated by in situ high energy x-ray diffraction." AIP Advances 10.10 (2020).

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