Nagy R, Niethammer M, Widmann M, Chen YC, Udvarhelyi P, Bonato C, Hassan JU, Karhu R, Ivanov IG, Nguyen Tien Son , Maze JR, Ohshima T, Soykal OO, Gali A, Lee SY, Kaiser F, Wrachtrup J (2019)
Publication Type: Journal article
Publication year: 2019
Book Volume: 10
Article Number: 1954
Journal Issue: 1
DOI: 10.1038/s41467-019-09873-9
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4 A 2 symmetry in ground and excited states, optical resonances are stable with near-Fourier-transform-limited linewidths, allowing exploitation of the spin selectivity of the optical transitions. In combination with millisecond-long spin coherence times originating from the high-purity crystal, we demonstrate high-fidelity optical initialization and coherent spin control, which we exploit to show coherent coupling to single nuclear spins with ∼1 kHz resolution. The summary of our findings makes this defect a prime candidate for realising memory-assisted quantum network applications using semiconductor-based spin-to-photon interfaces and coherently coupled nuclear spins.
APA:
Nagy, R., Niethammer, M., Widmann, M., Chen, Y.-C., Udvarhelyi, P., Bonato, C.,... Wrachtrup, J. (2019). High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide. Nature Communications, 10(1). https://doi.org/10.1038/s41467-019-09873-9
MLA:
Nagy, Roland, et al. "High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide." Nature Communications 10.1 (2019).
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