A 28 GHz Broadband Low Noise Amplifier in a 130 nm BiCMOS Technology for 5G Applications
Kolb K, Potschka J, Maiwald T, Aufinger K, Dietz M, Weigel R (2020)
Publication Language: English
Publication Status: Accepted
Publication Type: Conference contribution, Conference Contribution
Future Publication Type: Conference contribution
Publication year: 2020
Event location: Warsaw
DOI: 10.23919/mikon48703.2020.9253887
Abstract
This paper presents a 28GHz broadband low noise amplifier (LNA) with a fractional bandwidth > 32 % for 5G
wireless communication systems. The LNA provides a very low noise figure, a high linearity and a compact size. These properties are essential in a 5G MIMO receiver front-end. The LNA is designed in a 130 nm SiGe BiCMOS technology and provides 24 dB gain at 28 GHz with a 3 dB-bandwidth from 21.4 t 30.6 GHz. The simulated noise figure at 28GHz yields 2.18 dB. An input-referred 1 dB-compression point of -13.0 dBm is reached with a DC-power consumption of 25.1 mW
Authors with CRIS profile
Katharina Kolb
Lehrstuhl für Technische Elektronik
Julian Potschka
Lehrstuhl für Technische Elektronik
Tim Maiwald
Lehrstuhl für Technische Elektronik
Marco Dietz
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Involved external institutions
Germany (DE)How to cite
APA:
Kolb, K., Potschka, J., Maiwald, T., Aufinger, K., Dietz, M., & Weigel, R. (2020). A 28 GHz Broadband Low Noise Amplifier in a 130 nm BiCMOS Technology for 5G Applications. In Proceedings of the IEEE Microwave and Radar Week. Warsaw, PL.
MLA:
Kolb, Katharina, et al. "A 28 GHz Broadband Low Noise Amplifier in a 130 nm BiCMOS Technology for 5G Applications." Proceedings of the IEEE Microwave and Radar Week, Warsaw 2020.
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