Development of a silicon-diamond interface on (111) diamond

Schenk AK, Sear MJ, Dontschuk N, Tsai A, Rietwyk KJ, Tadich A, Cowie BC, Ley L, Stacey A, Pakes CI (2020)

Publication Type: Journal article

Publication year: 2020


Book Volume: 116

Article Number: 071602

Journal Issue: 7

DOI: 10.1063/1.5144093


We report the preparation of a silicon terminated (111) diamond surface. Low energy electron diffraction and core level photoemission demonstrate that this surface is highly ordered and homogeneous and possesses a negative electron affinity. Our analysis suggests that the surface reconstruction begins with the formation of silicon trimers that coalesce into a rhombohedral 2D silicon layer reminiscent of rhombohedral silicene.

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Schenk, A.K., Sear, M.J., Dontschuk, N., Tsai, A., Rietwyk, K.J., Tadich, A.,... Pakes, C.I. (2020). Development of a silicon-diamond interface on (111) diamond. Applied Physics Letters, 116(7).


Schenk, A. K., et al. "Development of a silicon-diamond interface on (111) diamond." Applied Physics Letters 116.7 (2020).

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