Rodolakis F, Hansmann P, Rueff JP, Toschi A, Haverkort MW, Sangiovanni G, Tanaka A, Saha-Dasgupta T, Andersen OK, Held K, Sikora M, Alliot I, Itie JP, Baudelet F, Wzietek P, Metcalf P, Marsi M (2010)
Publication Type: Journal article
Publication year: 2010
Book Volume: 104
Journal Issue: 4
DOI: 10.1103/PhysRevLett.104.047401
The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping, and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre-K edge. Contrary to what has been taken for granted so far, the metallic phase reached under pressure is shown to differ from the one obtained by changing doping or temperature. Using a novel computational scheme, we relate this effect to the role and occupancy of the a(1g) orbitals. This finding unveils the inequivalence of different routes across the Mott transition in V2O3.
APA:
Rodolakis, F., Hansmann, P., Rueff, J.-P., Toschi, A., Haverkort, M.W., Sangiovanni, G.,... Marsi, M. (2010). Inequivalent Routes across the Mott Transition in V2O3 Explored by X-Ray Absorption. Physical Review Letters, 104(4). https://doi.org/10.1103/PhysRevLett.104.047401
MLA:
Rodolakis, Fanny, et al. "Inequivalent Routes across the Mott Transition in V2O3 Explored by X-Ray Absorption." Physical Review Letters 104.4 (2010).
BibTeX: Download