Attosecond-fast internal photoemission

Heide C, Hauck M, Higuchi T, Ristein J, Ley L, Weber HB, Hommelhoff P (2020)

Publication Language: English

Publication Type: Journal article, Letter

Publication year: 2020


Book Volume: 14

Pages Range: 219–222


DOI: 10.1038/s41566-019-0580-6


The photoelectric effect has a sister process relevant in optoelectronics called internal photoemission1,2,3. Here an electron is photoemitted from a metal into a semiconductor4,5. While the photoelectric effect takes place within less than 100 attoseconds (1 as = 10−18 seconds)6,7, the attosecond timescale has so far not been measured for internal photoemission. Based on the new method CHArge transfer time MEasurement via Laser pulse duration-dependent saturation fluEnce determinatiON—CHAMELEON—we show that the atomically thin semimetal graphene coupled to bulk silicon carbide, forming a Schottky junction, allows charge transfer times as fast as (300 ± 200) as. These results are supported by a simple quantum mechanical model simulation. With the obtained cut-off bandwidth of 3.3 PHz (1 PHz = 1015 Hz) for the charge transfer rate, this semimetal/semiconductor interface represents a functional solid-state interface offering the speed and design space required for future light-wave signal processing.

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How to cite


Heide, C., Hauck, M., Higuchi, T., Ristein, J., Ley, L., Weber, H.B., & Hommelhoff, P. (2020). Attosecond-fast internal photoemission. Nature Photonics, 14, 219–222.


Heide, Christian, et al. "Attosecond-fast internal photoemission." Nature Photonics 14 (2020): 219–222.

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