Room temperature terahertz detection by rectifying field effect transistors

Preu S, Regensburger S, Lu H, Gossard AC (2019)

Publication Type: Conference contribution

Publication year: 2019

Publisher: VDE Verlag GmbH

Conference Proceedings Title: 8th German Microwave Conference, GeMiC 2014

Event location: Aachen DE

ISBN: 9783800735853

Abstract

Rectifying field effect transistors have become versatile Terahertz detectors. We will discuss the detection mechanism. The state of the art in rectifying field effect transistors will be reviewed, showing that this novel detector concept is already comparable to well developed Schottky diode technology. The paper will discuss advantages and disadvantages of III-V materials vs. Si-based transistors. We report on ultrafast direct detection with large area GaAs-based field effect transistors at room temperature.

Authors with CRIS profile

Sascha Preu Chair of Applied Physics (LAP) Stefan Regensburger Chair of Applied Physics (LAP)

Involved external institutions

University of California US United States (USA) (US)

How to cite

APA:

Preu, S., Regensburger, S., Lu, H., & Gossard, A.C. (2019). Room temperature terahertz detection by rectifying field effect transistors. In 8th German Microwave Conference, GeMiC 2014. Aachen, DE: VDE Verlag GmbH.

MLA:

Preu, Sascha, et al. "Room temperature terahertz detection by rectifying field effect transistors." Proceedings of the 8th German Microwave Conference, GeMiC 2014, Aachen VDE Verlag GmbH, 2019.

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