Cruz D, García Cerrillo J, Kumru B, Li N, Perea JD, Schmidt BVKJ, Lauermann I, Brabec C, Antonietti M (2019)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2019
Book Volume: 141
Pages Range: 12322-12328
Journal Issue: 31
DOI: 10.1021/jacs.9b03639
Effective, solution-processable designs of interfacial electron-transporting layers (ETLs) or hole-blocking layers are promising tools in modern electronic devices, e.g., to improve the performance, cost, and stability of perovskite-based solar cells. Herein, we introduce a facile synthetic route of thiazole-modified carbon nitride with 1.5 nm thick nanosheets which can be processed to a homogeneous, metal-free ETL for inverted perovskite solar cells. We show that thiazole-modified carbon nitride enables electronic interface enhancement via suppression of charge recombination, achieving 1.09 V in Voc and a rise to 20.17 mA/cm2 in Jsc. Hence, this report presents the successful implementation of a carbon-nitride-based structure to boost charge extraction from the perovskite absorber toward the electron transport layer in p-i-n devices
APA:
Cruz, D., García Cerrillo, J., Kumru, B., Li, N., Perea, J.D., Schmidt, B.V.K.J.,... Antonietti, M. (2019). Influence of Thiazole-Modified Carbon Nitride Nanosheets with Feasible Electronic Properties on Inverted Perovskite Solar Cells. Journal of the American Chemical Society, 141(31), 12322-12328. https://doi.org/10.1021/jacs.9b03639
MLA:
Cruz, Daniel, et al. "Influence of Thiazole-Modified Carbon Nitride Nanosheets with Feasible Electronic Properties on Inverted Perovskite Solar Cells." Journal of the American Chemical Society 141.31 (2019): 12322-12328.
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