A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology

Völkel M, Thouabtia M, Breun S, Aufinger K, Weigel R, Hagelauer AM (2019)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2019

Event location: Dallas

DOI: 10.1109/mwscas.2019.8885171

Abstract

In this paper, a monolithic signal source chip at
140 GHz and 160 GHz including two VCOs, a dynamic divider
and a static divider chain is presented. Two signal sources with
these high fundamental frequencies are realized. All components
have been designed using a 0.13μm 250 GHz fT SiGe BiCMOS
technology. The whole integrated circuit has a size of 930μm
x 600μm including bondpads and consumes 210mA from a
3.3V and 130mA from a 1.8V supply. The oscillators cover
a frequency range from 119.3–147.7 GHz and 154.2–164 GHz,
which results in a tuning range of 28.4 GHz and 9.8 GHz. A
output power of -0.9/3.6dBm with a best case phase noise of
-111.2/-108 dBc/Hz at 1MHz offset, measured at the divider
output for PLL stabilization is achieved.

Authors with CRIS profile

Involved external institutions

Infineon Technologies AG Germany (DE)

How to cite

APA:

Völkel, M., Thouabtia, M., Breun, S., Aufinger, K., Weigel, R., & Hagelauer, A.M. (2019). A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology. In Proceedings of the MWSCAS. Dallas, US.

MLA:

Völkel, Matthias, et al. "A Signal Source Chip at 140 GHz and 160 GHz for Radar Applications in a SiGe Bipolar Technology." Proceedings of the MWSCAS, Dallas 2019.

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