Extended van Hove Singularity and Superconducting Instability in Doped Graphene
Mcchesney JL, Bostwick A, Ohta T, Seyller T, Horn K, Gonzalez J, Rotenberg E (2010)
Publication Type: Journal article
Publication year: 2010
Journal
Book Volume: 104
Journal Issue: 13
DOI: 10.1103/PhysRevLett.104.136803
Abstract
We have investigated the effects of doping on a single layer of graphene using angle-resolved photoemission spectroscopy. We show that many-body interactions severely warp the Fermi surface, leading to an extended van~Hove singularity (EVHS) at the graphene M point. The ground state properties of graphene with such an EVHS are calculated, analyzing the competition between a magnetic instability and the tendency towards superconductivity. We find that the latter plays the dominant role as it is enhanced by the strong modulation of the interaction along the Fermi line, leading to an energy scale for the onset of the pairing instability as large as 1~meV when the Fermi energy is sufficiently close to the EVHS.
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Additional Organisation(s)
Involved external institutions
Lawrence Berkeley National Laboratory (LBNL)
United States (USA) (US)
Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)
Germany (DE)
Spanish National Research Council / Consejo Superior de Investigaciones Científicas (CSIC)
Spain (ES)
United States (USA) (US)
Fritz-Haber-Institut der Max-Planck-Gesellschaft (FHI)
Germany (DE)
Spanish National Research Council / Consejo Superior de Investigaciones Científicas (CSIC)
Spain (ES)
How to cite
APA:
Mcchesney, J.L., Bostwick, A., Ohta, T., Seyller, T., Horn, K., Gonzalez, J., & Rotenberg, E. (2010). Extended van Hove Singularity and Superconducting Instability in Doped Graphene. Physical Review Letters, 104(13). https://doi.org/10.1103/PhysRevLett.104.136803
MLA:
Mcchesney, J. L., et al. "Extended van Hove Singularity and Superconducting Instability in Doped Graphene." Physical Review Letters 104.13 (2010).
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