Atomic Layer Deposition of i-Sb2S3/p-NiO Thin Layers into Anodic Alumina Membranes for Photoelectrochemical Water Splitting

Barr MK, Assaud L, Wu Y, Bachmann J, Santinacci L (2015)

Publication Type: Journal article

Publication year: 2015

Journal

ECS Transactions Electrochemical Society

Book Volume: 66

Pages Range: 119-126

Journal Issue: 6

DOI: 10.1149/06606.0119ecst

Abstract

A nanostructured photoelectrode was fabricated by atomic layer deposition (ALD) of NiO and Sb2S3 in nanoporous alumina. The fabrication, i.e. the successive ALD of NiO and Sb2S3, and the characterization of the arrays of coaxial NiO/Sb2S3 junction by electron microscopies are first reported. The optical and photoelectrochemical preliminary testing of the combination of such extremely thin absorber, Sb2S3, with a p-type semiconductor, NiO, are proposed in a second part. Although the photoconversion performances should be improved, the present work demonstrates validity of the concept.

Authors with CRIS profile

Loic Assaud Lehrstuhl für Anorganische und Allgemeine Chemie Yanlin Wu Lehrstuhl für Anorganische und Allgemeine Chemie Julien Bachmann Lehrstuhl für Chemistry of thin film materials

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Aix-Marseille University / Aix-Marseille Université FR France (FR)

How to cite

APA:

Barr, M.K., Assaud, L., Wu, Y., Bachmann, J., & Santinacci, L. (2015). Atomic Layer Deposition of i-Sb2S3/p-NiO Thin Layers into Anodic Alumina Membranes for Photoelectrochemical Water Splitting. ECS Transactions, 66(6), 119-126. https://doi.org/10.1149/06606.0119ecst

MLA:

Barr, M. K.S., et al. "Atomic Layer Deposition of i-Sb2S3/p-NiO Thin Layers into Anodic Alumina Membranes for Photoelectrochemical Water Splitting." ECS Transactions 66.6 (2015): 119-126.

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