Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures

Kalkofen B, Ahmed B, Beljakowa S, Lisker M, Kim YS, Burte EP (2018)

Publication Type: Conference contribution

Publication year: 2018

Publisher: IEEE

City/Town: NEW YORK

Conference Proceedings Title: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)

Event location: Cork IE

DOI: 10.1109/nano.2018.8626235

Authors with CRIS profile

Svetlana Beljakowa Lehrstuhl für Elektronische Bauelemente

Related research project(s)

Atomic layer deposition of dopant source layers for semiconductor doping - Characterization and modelling of drive-in processes (FR 713/14-1) Oct. 2, 2017 - Sept. 30, 2019

Involved external institutions

Otto-von-Guericke-Universität Magdeburg DE Germany (DE) Lam Research US United States (USA) (US)

How to cite

APA:

Kalkofen, B., Ahmed, B., Beljakowa, S., Lisker, M., Kim, Y.S., & Burte, E.P. (2018). Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures. In 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO). Cork, IE: NEW YORK: IEEE.

MLA:

Kalkofen, Bodo, et al. "Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures." Proceedings of the 18th IEEE International Conference on Nanotechnology (IEEE-NANO), Cork NEW YORK: IEEE, 2018.

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