Thermal Memory Effect Characterization of GaN based Class ABJ Power Amplifier using Intrinsic Temperature Measurement

Jueschke P, Fischer G (2018)

Publication Type: Conference contribution

Publication year: 2018

Publisher: IEEE

City/Town: NEW YORK

Pages Range: 5-7

Conference Proceedings Title: 2018 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR)

Event location: Anaheim, CA US

DOI: 10.1109/pawr.2018.8310052

Authors with CRIS profile

Georg Fischer Professur für Technische Elektronik

Involved external institutions

Nokia Bell Labs DE Germany (DE)

How to cite

APA:

Jueschke, P., & Fischer, G. (2018). Thermal Memory Effect Characterization of GaN based Class ABJ Power Amplifier using Intrinsic Temperature Measurement. In 2018 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS (PAWR) (pp. 5-7). Anaheim, CA, US: NEW YORK: IEEE.

MLA:

Jueschke, P., and Georg Fischer. "Thermal Memory Effect Characterization of GaN based Class ABJ Power Amplifier using Intrinsic Temperature Measurement." Proceedings of the IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), Anaheim, CA NEW YORK: IEEE, 2018. 5-7.

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