5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS

Ciocoveanu R, Weigel R, Hagelauer AM, Geiselbrechtinger A, Issakov V (2018)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2018

Conference Proceedings Title: 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS

Event location: Kyoto International Conference Center, Kyoto, Japan JP

DOI: 10.23919/apmc.2018.8617378

Abstract

This paper presents a single-stage stacked Class AB power amplifier (PA) with lower complexity for fifth generation (5G) K/Ka band front-ends that has been realized in a 45nm PDSOI CMOS technology. Measurement results show that the power amplifier achieves a saturated output power (Psat) of 17.3 dBm with a 39.7% maximum power-added efficiency (PAEmax) at 24 GHz. The output-referred 1-dB compression point (OP1dB) is 14.3dBm and the saturated output power varies from 15.9dBm to 17.3dBm for a frequency range from 22 GHz to 28 GHz. Furthermore, the circuit draws 40mA from a 2.9V supply and the chip core size is 0.35mm x 0.25 mm.

Authors with CRIS profile

Radu Ciocoveanu Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik (LTE)

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Ciocoveanu, R., Weigel, R., Hagelauer, A.M., Geiselbrechtinger, A., & Issakov, V. (2018). 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. In 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS. Kyoto International Conference Center, Kyoto, Japan, JP.

MLA:

Ciocoveanu, Radu, et al. "5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS." Proceedings of the 2018 Asia-Pacific Microwave Conference (APMC 2018), Kyoto International Conference Center, Kyoto, Japan 2018.

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