High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States

Biglari M, Lieske T, Fey D (2018)

Publication Type: Conference contribution, Original article

Publication year: 2018

Publisher: ACM

City/Town: New York, NY, USA

Pages Range: 19 - 24

Conference Proceedings Title: Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures

Event location: Athens, Greece

ISBN: 978-1-4503-5815-6

URI: http://doi.acm.org/10.1145/3232195.3232217

DOI: 10.1145/3232195.3232217

Authors with CRIS profile

Mehrdad Biglari Lehrstuhl für Informatik 3 (Rechnerarchitektur) Tobias Lieske Lehrstuhl für Informatik 3 (Rechnerarchitektur) Dietmar Fey Lehrstuhl für Informatik 3 (Rechnerarchitektur)

How to cite

APA:

Biglari, M., Lieske, T., & Fey, D. (2018). High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States. In Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures (pp. 19 - 24). Athens, Greece: New York, NY, USA: ACM.

MLA:

Biglari, Mehrdad, Tobias Lieske, and Dietmar Fey. "High-Endurance Bipolar ReRAM-Based Non-Volatile Flip-Flops with Run-Time Tunable Resistive States." Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, Athens, Greece New York, NY, USA: ACM, 2018. 19 - 24.

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