Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange
Birajdar B, Antesberger T, Butz B, Stutzmann M, Spiecker E (2012)
Publication Status: Published
Publication Type: Journal article
Publication year: 2012
Journal
Publisher: Elsevier
Book Volume: 66
Pages Range: 550-553
Journal Issue: 8
DOI: 10.1016/j.scriptamat.2011.12.045
Abstract
The mechanism of Al transport during Al-induced layer exchange and crystallization of amorphous Si (a-Si) has been investigated by in situ and analytical transmission electron microscopy. Significant grain boundary realignment and coarsening of Al grains close to the Si crystallization growth front as well as push up of excess Al into the a-Si layer at distances even a few micrometers away from the crystallization front were observed. Stress-mediated diffusion of Al is postulated to explain the experimental observations. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Authors with CRIS profile
Balaji Birajdar
Benjamin Butz
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Erdmann Spiecker
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Additional Organisation(s)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)
Exzellenz-Cluster Engineering of Advanced Materials (EAM)
Involved external institutions
Germany (DE)How to cite
APA:
Birajdar, B., Antesberger, T., Butz, B., Stutzmann, M., & Spiecker, E. (2012). Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange. Scripta Materialia, 66(8), 550-553. https://doi.org/10.1016/j.scriptamat.2011.12.045
MLA:
Birajdar, Balaji, et al. "Direct in situ transmission electron microscopy observation of Al push up during early stages of the Al-induced layer exchange." Scripta Materialia 66.8 (2012): 550-553.
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