Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer

Amin AY, Khassanov A, Reuter K, Meyer-Friedrichsen T, Halik M (2012)


Publication Language: English

Publication Type: Journal article, Report

Publication year: 2012

Journal

Book Volume: 134

Pages Range: 16548-16550

Journal Issue: 40

URI: http://pubs.acs.org/doi/abs/10.1021/ja307802q

DOI: 10.1021/ja307802q

Abstract

An asymmetric n-alkyl substitution pattern was realized in 2-tridecyl[1]benzothieno[3,2-b][1]benzothiophene (C13-BTBT) in order to improve the charge transport properties in organic thin-film transistors. We obtained large hole mobilities up to 17.2 cm2/(V·s) in low-voltage operating devices. The large mobility is related to densely packed layers of the BTBT π-systems at the channel interface dedicated to the substitution motif and confirmed by X-ray reflectivity measurements. The devices exhibit promising stability in continuous operation for several hours in ambient air.

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APA:

Amin, A.Y., Khassanov, A., Reuter, K., Meyer-Friedrichsen, T., & Halik, M. (2012). Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer. Journal of the American Chemical Society, 134(40), 16548-16550. https://doi.org/10.1021/ja307802q

MLA:

Amin, Atefeh Y., et al. "Low-Voltage Organic Field Effect Transistors with a 2-Tridecyl[1]benzothieno[3,2- b ][1]benzothiophene Semiconductor Layer." Journal of the American Chemical Society 134.40 (2012): 16548-16550.

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