Halik M, Peukert W, Braunschweig B, Klaumünzer M, Hirschmann J, Faber H (2012)
Publication Language: English
Publication Type: Journal article, Report
Publication year: 2012
Book Volume: 4
Pages Range: 1693–1696
Volume: 4
Issue: 3
Journal Issue: 3
URI: http://pubs.acs.org/doi/full/10.1021/am2018223
DOI: 10.1021/am2018223
Thin-films of zinc oxide nanoparticles were investigated by photoluminescence spectroscopy and a broad defect-related yellow-green emission was observed. Oxygen plasma treatment was applied in order to reduce the number of defects, and the emission intensity was quenched to 4\% of the initial value. Thin-film transistors that incorporate the nanoparticles as active semiconducting layers show an improved device performance after oxygen plasma treatment. The maximum drain current and the charge carrier mobility increased more than 1 order of magnitude up to a nominal value of 23 cm2 V−1 s−1 and the threshold voltage was lowered.
APA:
Halik, M., Peukert, W., Braunschweig, B., Klaumünzer, M., Hirschmann, J., & Faber, H. (2012). Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle based thin-film transistors. ACS Applied Materials and Interfaces, 4(3), 1693–1696. https://doi.org/10.1021/am2018223
MLA:
Halik, Marcus, et al. "Impact of oxygen plasma treatment on the device performance of zinc oxide nanoparticle based thin-film transistors." ACS Applied Materials and Interfaces 4.3 (2012): 1693–1696.
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