Hessmann MT, Kunz T, Burkert I, Gawehns N, Schaefer L, Frick T, Schmidt M, Meidel B, Auer R, Brabec C (2011)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2011
Book Volume: 520
Pages Range: 595-599
Journal Issue: 1
DOI: 10.1016/j.tsf.2011.07.031
We present a large area thin film base substrate for the epitaxy of crystalline silicon. The concept of epitaxial growth of silicon on large area thin film substrates overcomes the area restrictions of an ingot based monocrystalline silicon process. Further it opens the possibility for a roll to roll process for crystalline silicon production. This concept suggests a technical pathway to overcome the limitations of silicon ingot production in terms of costs, throughput and completely prevents any sawing losses. The core idea behind these thin film substrates is a laser welding process of individual, thin silicon wafers. In this manuscript we investigate the properties of laser welded monocrystalline silicon foils (100) by micro-Raman mapping and spectroscopy. It is shown that the laser beam changes the crystalline structure of float zone grown silicon along the welding seam. This is illustrated by Raman mapping which visualizes compressive stress as well as tensile stress in a range of - 147.5 to 32.5 MPa along the welding area. © 2011 Elsevier B.V.
APA:
Hessmann, M.T., Kunz, T., Burkert, I., Gawehns, N., Schaefer, L., Frick, T.,... Brabec, C. (2011). Laser process for extended silicon thin film solar cells. Thin Solid Films, 520(1), 595-599. https://doi.org/10.1016/j.tsf.2011.07.031
MLA:
Hessmann, M. T., et al. "Laser process for extended silicon thin film solar cells." Thin Solid Films 520.1 (2011): 595-599.
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