Frequency Response of Stress-Effects on CMOS Power Amplifiers

Cattaneo A, Pinarello S, Müller JE, Weigel R (2014)

Publication Type: Conference contribution

Publication year: 2014

Pages Range: 79-81

Event location: South Lake Tahoe US

DOI: 10.1109/IIRW.2014.7049515

Abstract

RF Power Amplifiers (PAs) undergo to high electrical stress conditions due to strong lateral field along the channel. Reliability of CMOS PAs is largely studied in literature. Generally is focused in understanding how RF stress can harm the device. Many authors proved that the generation of defects does not have a frequency dependency. In this work the problem is faced from a new point of view. The response of the defects, instead of the generation, is studied over frequency. It is demonstrated that the electrons-trapping by interface states is quenched by increasing the operation frequency. As a consequence the performance of the PA are recovered. This finding points out for the first time the possibility of relaxing the reliability constrains when operating in RF regime.

Authors with CRIS profile

Andrea Cattaneo Lehrstuhl für Technische Elektronik Sandro Pinarello Lehrstuhl für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik

How to cite

APA:

Cattaneo, A., Pinarello, S., Müller, J.-E., & Weigel, R. (2014). Frequency Response of Stress-Effects on CMOS Power Amplifiers. In Proceedings of the IEEE International Integrated Reliability Workshop Final Report (IIRW) (pp. 79-81). South Lake Tahoe, US.

MLA:

Cattaneo, Andrea, et al. "Frequency Response of Stress-Effects on CMOS Power Amplifiers." Proceedings of the IEEE International Integrated Reliability Workshop Final Report (IIRW), South Lake Tahoe 2014. 79-81.

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