Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation

Ochedowski O, Marinov K, Wilbs G, Keller G, Scheuschner N, Severin D, Bender M, Maultzsch J, Tegude FJ, Schleberger M (2013)

Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Journal of Applied Physics AIP Publishing

Publisher: AMER INST PHYSICS

Book Volume: 113

Journal Issue: 21

DOI: 10.1063/1.4808460

Open Access Link: https://arxiv.org/abs/1304.3614

Abstract

We have investigated the deterioration of field effect transistors based on two-dimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U28+ ions using three different fluences. By electrical characterization, atomic force microscopy, and Raman spectroscopy, we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 x 10(11) ions/cm(2), the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance. (C) 2013 AIP Publishing LLC.

Authors with CRIS profile

Janina Maultzsch Lehrstuhl für Experimentalphysik

Involved external institutions

Universität Duisburg-Essen (UDE) DE Germany (DE) Technische Universität Berlin DE Germany (DE) GSI Helmholtzzentrum für Schwerionenforschung GmbH DE Germany (DE)

How to cite

APA:

Ochedowski, O., Marinov, K., Wilbs, G., Keller, G., Scheuschner, N., Severin, D.,... Schleberger, M. (2013). Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation. Journal of Applied Physics, 113(21). https://doi.org/10.1063/1.4808460

MLA:

Ochedowski, O., et al. "Radiation hardness of graphene and MoS2 field effect devices against swift heavy ion irradiation." Journal of Applied Physics 113.21 (2013).

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