Thermally-induced evolution of codeposited Co-Si layers on Si(100) surfaces

Rangelov G, Fauster T (1996)

Publication Status: Published

Publication Type: Journal article

Publication year: 1996


Publisher: Elsevier

Book Volume: 365

Pages Range: 403-410

DOI: 10.1016/0039-6028(96)00735-2


The formation of ultrathin epitaxial layers of CoSi2 on Si(100) surfaces is studied by means of valence-band and core-level photoemission spectroscopy with synchrotron radiation, low-energy electron diffraction (LEED) and Auger electron spectroscopy. The CoSi2 films are prepared by the template method in which an amorphous layer with CoSi2 stoichiometry is coevaporated on top of a 2.6-3 monolayer thick Co overlayer at room temperature. The amorphous layer does not react to CoSi,. Annealing to 300 degrees C leads to the crystallization of the layer demonstrated by the formation of a (root 2x root 2)R45 degrees LEED pattern. This layer consists of disilicide in CaF2 structure with some contribution from another silicide phase. This surface is stable at least up to 460 degrees C. After further annealing above 460 degrees C the disilicide disappears, at least from the sub-surface layer, and the surface is covered by clean Si patches and patches of the second silicide phase. The new silicide phase is characterized by a (2 root 2x root 2)R45 degrees LEED pattern and has a different electronic structure and Si2p binding-energy shifts. A comparison with previous experimental results and existing theoretical electronic structure calculations suggests that the new silicide phase can be identified as adamantane disilicide.

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Rangelov, G., & Fauster, T. (1996). Thermally-induced evolution of codeposited Co-Si layers on Si(100) surfaces. Surface Science, 365, 403-410.


Rangelov, Georgi, and Thomas Fauster. "Thermally-induced evolution of codeposited Co-Si layers on Si(100) surfaces." Surface Science 365 (1996): 403-410.

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