Image-potential-induced surface state at Si(100)

Kutschera M, Weinelt M, Rohlfing M, Fauster T (2007)

Publication Status: Published

Publication Type: Journal article

Publication year: 2007


Publisher: Springer Verlag (Germany)

Book Volume: 88

Pages Range: 519-526

DOI: 10.1007/s00339-007-4074-x


We have identified a surface state on Si(100) (2x1) at a binding energy of 0.69 +/- 0.05 eV with respect to the vacuum level. Band-structure calculations within the GW method reveal that almost 80% of the probability density of the resonance is located in front of the surface. We therefore assign the surface resonance to an image-potential state. It has a lifetime of about 10 fs and contributes significantly to two-photon photoemission from Si(100).

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Kutschera, M., Weinelt, M., Rohlfing, M., & Fauster, T. (2007). Image-potential-induced surface state at Si(100). Applied Physics A: Materials Science and Processing, 88, 519-526.


Kutschera, Michael, et al. "Image-potential-induced surface state at Si(100)." Applied Physics A: Materials Science and Processing 88 (2007): 519-526.

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