Dynamics of exciton formation at the Si(100) c(4x2) surface

Weinelt M, Kutschera M, Fauster T, Rohlfing M (2004)

Publication Status: Published

Publication Type: Journal article

Publication year: 2004


Publisher: American Physical Society

Book Volume: 92

Article Number: 126801

DOI: 10.1103/PhysRevLett.92.126801


Carrier recombination at the Si(100) c(4x2) surface and the underlying surface electronic structure is unraveled by a combination of two-photon photoemission and many-body perturbation theory: An electron excited to the silicon conduction band by a femtosecond infrared laser pulse scatters within 220 ps to the unoccupied surface band, needs 1.5 ps to jump to the band bottom via emission of optical phonons, and finally relaxes within 5 ps with an excited hole in the occupied surface band to form an exciton living for nanoseconds.

Authors with CRIS profile

Involved external institutions

How to cite


Weinelt, M., Kutschera, M., Fauster, T., & Rohlfing, M. (2004). Dynamics of exciton formation at the Si(100) c(4x2) surface. Physical Review Letters, 92. https://doi.org/10.1103/PhysRevLett.92.126801


Weinelt, Martin, et al. "Dynamics of exciton formation at the Si(100) c(4x2) surface." Physical Review Letters 92 (2004).

BibTeX: Download