Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering

Reparaz JS, Peica N, Kirste R, Goni AR, Wagner MR, Callsen G, Alonso MI, Garriga M, Marcus IC, Ronda A, Berbezier I, Maultzsch J, Thomsen C, Hoffmann A (2013)

Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Nanotechnology Institute of Physics: Hybrid Open Access

Publisher: IOP PUBLISHING LTD

Book Volume: 24

Journal Issue: 18

DOI: 10.1088/0957-4484/24/18/185704

Abstract

Local strain and Ge content distribution in self-assembled, in-plane Ge/Si nanowires grown by combining molecular beam epitaxy and the metal-catalyst assisted-growth method were investigated by tip-enhanced Raman scattering. We show that this technique is essential to study variations of physical properties of single wires at the nanoscale, a task which cannot be achieved with conventional micro-Raman scattering. As two major findings, we report that (i) the Ge distribution in the (001) crystallographic direction is inhomogeneous, displaying a gradient with a higher Ge content close to the top surface, and (ii) in contrast, the (uncapped) wires exhibit essentially the same small residual compressive strain everywhere along the wire.

Authors with CRIS profile

Janina Maultzsch Lehrstuhl für Experimentalphysik

Involved external institutions

Technische Universität Berlin

Germany (DE) Autonomous University of Barcelona (UAB) / Universitat Autònoma de Barcelona

Spain (ES) Aix-Marseille University / Aix-Marseille Université

France (FR)

How to cite

APA:

Reparaz, J.S., Peica, N., Kirste, R., Goni, A.R., Wagner, M.R., Callsen, G.,... Hoffmann, A. (2013). Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering. Nanotechnology, 24(18). https://doi.org/10.1088/0957-4484/24/18/185704

MLA:

Reparaz, J. S., et al. "Probing local strain and composition in Ge nanowires by means of tip-enhanced Raman scattering." Nanotechnology 24.18 (2013).

BibTeX: Download