A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

Loquai S, Bunge CA, Ziemann O, Schmauß B, Kruglov R (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Journal of Lightwave Technology Optical Society of America

Publisher: Optical Society of America

Book Volume: 28

Pages Range: 2646-2653

Journal Issue: 18

DOI: 10.1109/JLT.2010.2059372

Authors with CRIS profile

Bernhard Schmauß Professur für Hochfrequenztechnik mit dem Schwerpunkt Optische Hochfrequenztechnik und Photonik

How to cite

APA:

Loquai, S., Bunge, C.-A., Ziemann, O., Schmauß, B., & Kruglov, R. (2010). A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths. Journal of Lightwave Technology, 28(18), 2646-2653. https://doi.org/10.1109/JLT.2010.2059372

MLA:

Loquai, S., et al. "A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths." Journal of Lightwave Technology 28.18 (2010): 2646-2653.

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