Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene
Herziger F, Maultzsch J (2013)
Publication Status: Published
Publication Type: Journal article
Publication year: 2013
Journal
Publisher: WILEY-V C H VERLAG GMBH
Book Volume: 250
Pages Range: 2697-2701
Journal Issue: 12
Abstract
We investigate the stacking-order dependence of the double-resonant LO-ZO Raman combination mode, also called N mode, in ABA- and ABC-stacked trilayer graphene. By tuning the laser energy, we observe different N mode dispersions for both stackings and show that these shifts are indicative for the stacking type. We explain the different shifts with stacking-related changes in the electronic bands and the phonon dispersion. Additionally, we performed simulations of the double-resonant Raman spectra of the N mode in bilayer graphene. Our calculations predict a splitting of the N mode for laser excitation energies above 2.6eV due to different contributions from both bands. We also analyzed the subpeaks of the N mode in few-layer graphene and explain their appearance only at even numbers of graphene layers. Graphical illustration of the in-plane LO and out-of-plane ZO -point vibrations in Bernal-stacked (AB-stacked) bilayer graphene. The unit-cell atoms are highlighted in blue. The dashed vertical lines denote the unit cell atoms that are directly above each other. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Authors with CRIS profile
Involved external institutions
Germany (DE)How to cite
APA:
Herziger, F., & Maultzsch, J. (2013). Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene. physica status solidi (b), 250(12), 2697-2701. https://doi.org/10.1002/pssb.201300313
MLA:
Herziger, Felix, and Janina Maultzsch. "Influence of the layer number and stacking order on out-of-plane phonons in few-layer graphene." physica status solidi (b) 250.12 (2013): 2697-2701.
BibTeX: Download