Nasr I, Lämmle B, Knapp H, Fischer G, Weigel R, Kissinger D (2012)
Publication Type: Conference contribution
Publication year: 2012
Publisher: IEEE
Pages Range: 49-52
Conference Proceedings Title: IEEE Topical Meeting Silicon Monolithic Integrated Circuits in RF Systems Digest
Event location: Santa Clara, CA, USA
ISBN: 978-1-4577-1317-0
DOI: 10.1109/SiRF.2012.6160130
This paper presents a wide tuning range modified Colpitts VCO with high output power. The circuit was fabricated using a lowcost SiGe technology with an ft/fmax of 170/250 GHz. The VCO can be tuned between 56.4 and 73.8 GHz having a tuning range of approx. 27\%. The maximum measured output power is +9.4 dBm, and the output power remains above +7.0 dBm over the entire tuning range. The VCO has a minimum phase noise of -95 dBc/Hz, which stays below -88 dBc/Hz over the entire tuning range. On-chip frequency dividers were used to enable easier measurement. A single transformer was designed and used simultaneously for output matching of the VCO and as an output balun. The overall chip draws 112 mA from a 3.3 V supply, where the VCO draws 45 mA of the total current.
APA:
Nasr, I., Lämmle, B., Knapp, H., Fischer, G., Weigel, R., & Kissinger, D. (2012). A wide tuning range high output power 56-74 GHz VCO with on-chip transformer load in SiGe technology. In IEEE Topical Meeting Silicon Monolithic Integrated Circuits in RF Systems Digest (pp. 49-52). Santa Clara, CA, USA: IEEE.
MLA:
Nasr, Ismail, et al. "A wide tuning range high output power 56-74 GHz VCO with on-chip transformer load in SiGe technology." Proceedings of the IEEE Topical Meeting Silicon Monolithic Integrated Circuits in RF Systems Digest, Santa Clara, CA, USA IEEE, 2012. 49-52.
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