Li D, Kunz T, Wolf N, Liebig JP, Wittmann S, Ahmad T, Hessmann MT, Auer R, Göken M, Brabec C (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Publisher: Elsevier
Book Volume: 583
Pages Range: 25-33
Journal Issue: 1
DOI: 10.1016/j.tsf.2015.03.051
Hydrogenated intrinsic amorphous silicon (a-Si:H) was investigated as a surface passivationmethod for crystalline silicon thin film solar cells on graphite substrates. The results of the experiments, including quantumefficiency and current density-voltage measurements, show improvements in cell performance. This improvement is due to surface passivation by an a-Si:H(i) layer, which increases the open circuit voltage and the fill factor. In comparison with our previous work, we have achieved an increase of 0.6% absolute cell efficiency for a 40 μm thick 4 cm2 aperture area on the graphite substrate. The optical properties of the SiNx/a-Si:H(i) stack were studied using spectroscopic ellipsometer techniques. Scanning transmission electron microscopy inside a scanning electron microscope was applied to characterize the cross section of the SiNx/a-Si:H(i) stack using focus ion beam preparation.
APA:
Li, D., Kunz, T., Wolf, N., Liebig, J.P., Wittmann, S., Ahmad, T.,... Brabec, C. (2015). Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates. Thin Solid Films, 583(1), 25-33. https://doi.org/10.1016/j.tsf.2015.03.051
MLA:
Li, Da, et al. "Silicon nitride and intrinsic amorphous silicon double antireflection coatings for thin-film solar cells on foreign substrates." Thin Solid Films 583.1 (2015): 25-33.
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